simple drive requirement small package outline surface mount device g d s leshan radio company, ltd. sot? 23 (to?236ab) s-lp9435lt1g 30v p-channel enhancement-mode mosfet features advanced trench process technology high density cell design for ultra low on-resistance v ds = -30v r ds(on) , v gs @-10v, i ds @-5.3a = 7 0m ? r ds(on) , v gs @-4.5v, i ds @-4.2a = 10 0m ? improved shoot-through fom maximum ratings and thermal characteristics (t a = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -30 v gate-source voltage v gs 20 continuous drain current i d -5.3 a pulsed drain current 1) i dm -20 maximum power dissipation ta = 25 o c p d 1.4 w ta = 75 o c 0.8 operating junction and storage temperature range t j , t stg -55 to 150 o c junction-to-case thermal resistance r jc 50 o c/w junction-to-ambient thermal resistance (pcb mounted) 2) r ja 90 note: 1. repetitive rating: pulse width limited by the maximum junction temperature 2. 1-in 2 2oz cu pcb board 3. guaranteed by design; not subject to production testing device shipping p94 marking 3000/tape&reel lp9435lt1g p94 lp9435lt3g 10000/tape&reel ordering information 1 2 3 rev .o 1/4 1 2 3 lp9435lt1g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-lp9435lt1g s-lp9435lt3g
leshan radio company, ltd. electrical characteristics parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d -30 = -250ua v drain-source on-state resistance r ds(on) v gs d 70.0 = -4.5v, i = -4.2a 100.0 m drain-source on-state resistance r ds(on) v gs d 50.0 = -10v, i = -5.3a 70.0 gate threshold voltage v gs(th) v ds =v gs , i d -1 = -250ua -1.7 -3 v zero gate voltage drain current i dss v ds 1 = -24v, v gs = 0v ua gate body leakage i gss v gs 100 = 20v, v ds = 0v na forward transconductance g fs v ds d 10 = -10v, i = -5.3a s dynamic 3) total gate charge q g v ds =-15v, i d = -5.3a v gs = -10v 28 nc gate-source charge q gs 3 gate-drain charge q gd 7 turn-on delay time t d(on) v dd = -15v, r l = 15 ? i d = -1a, v gen = -10v r g = 6 9 ns turn-on rise time t r 15 turn-off delay time t d(off) 75 turn-off fall time t f 40 input capacitance c iss v ds = -15v, v gs = 0v f = 1.0 mhz 745 pf output capacitance c oss 440 reverse transfer capacitance c rss 120 source-drain diode max. diode forward current i s -2.6 a diode forward voltage v sd i s -1.3 = -2.6a, v gs = 0v v note : pulse test: pulse width <= 300us, duty cycle<= 2% lp9435lt1g , s-lp9435lt1g rev .o 2/4
leshan radio company, ltd. typical electrical characteristics rev .o 3/4 lp9435lt1g , s-lp9435lt1g
notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 leshan radio company, ltd. rev .o 4/4 lp9435lt1g , s-lp9435lt1g
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